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| CTLM1074-M832D MULTI DISCRETE MODULE TM SURFACE MOUNT SILICON LOW VCE(SAT) PNP TRANSISTOR AND LOW VF SCHOTTKY RECTIFIER w w w. c e n t r a l s e m i . c o m TLM832D CASE MARKING CODE: CFD APPLICATIONS * Switching Circuits * DC / DC Converters * LCD Backlighting * Battery powered / Portable Equipment applications including Cell Phones, Digital Cameras, Pagers, PDAs, Notebook PCs, etc. MAXIMUM RATINGS - CASE: (TA=25C) Power Dissipation (Note 1) Operating and Storage Junction Temperature Thermal Resistance MAXIMUM RATINGS - Q1: (TA=25C) Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Continuous Collector Current MAXIMUM RATINGS - D1: (TA=25C) Peak Repetitive Reverse Voltage Continuous Forward Current Peak Repetitive Forward Current, tp<1.0ms Peak Forward Surge Current, tp= 8.0ms DESCRIPTION: The CENTRAL SEMICONDUCTOR CTLM1074-M832D consists of a Low VCE(SAT) PNP Transistor and a Low VF Schottky Rectifier. Packaged in a small, thermally efficient, leadless 3x2mm surface mount case, it is designed for applications where small size, operational efficiency, and low energy consumption are the prime requirements. Due to its leadless package design this device is capable of dissipating up to 4 times the power of similar devices in comparable sized surface mount packages. FEATURES * Dual Chip Device * High Current (1.0A) Transistor and Schottky Rectifier * Low VCE(SAT) PNP Transistor (450mV @ IC=1.0A MAX) * Low VF Schottky Rectifier (550mV @ 1.0A MAX) * High Power to Footprint Ratio of 275mW per sq mm (Package Power Dissipation / Package Surface Area) * Small TLM 3x2mm Leadless Surface Mount Package * Complementary Device: CTLM1034-M832D SYMBOL PD TJ, Tstg JA VCBO VCEO VEBO IC VRRM IF IFRM IFSM UNITS W C C/W V V V A V A A A MAX 100 100 UNITS nA nA V V V mV mV 1.65 -65 to +150 76 40 25 6.0 1.0 40 1.0 3.5 10 ELECTRICAL CHARACTERISTICS - Q1: (TA=25C unless otherwise noted) SYMBOL TEST CONDITIONS MIN TYP ICBO VCB=40V IEBO VEB=6.0V BVCBO IC=100A 40 BVCEO IC=10mA 25 BVEBO IE=100A 6.0 VCE(SAT) IC=50mA, IB=5.0mA 20 VCE(SAT) IC=100mA, IB=10mA 35 Notes: (1) FR-4 Epoxy PCB with copper mounting pad area of 54mm2. 50 75 R2 (19-February 2010) CTLM1074-M832D MULTI DISCRETE MODULE TM SURFACE MOUNT SILICON LOW VCE(SAT) PNP TRANSISTOR AND LOW VF SCHOTTKY RECTIFIER ELECTRICAL CHARACTERISTICS - Q1- Continued: (TA=25C) SYMBOL TEST CONDITIONS MIN VCE(SAT) IC=200mA, IB=20mA VCE(SAT) IC=500mA, IB=50mA VCE(SAT) IC=800mA, IB=80mA VCE(SAT) IC=1.0A, IB=100mA VBE(SAT) IC=800mA, IB=80mA VBE(ON) VCE=1.0V, IC=10mA hFE VCE=1.0V, IC=10mA 100 hFE VCE=1.0V, IC=100mA 100 hFE VCE=1.0V, IC=500mA 100 hFE VCE=1.0V, IC=1.0A 50 fT VCE=10V, IC=50mA, f=100MHz 100 Cob VCB=10V, IE=0, f=1.0MHz ELECTRICAL CHARACTERISTICS - D1: (TA=25C) SYMBOL TEST CONDITIONS IR VR=5.0V IR VR=8.0V IR VR=15V BVR IR=100A VF IF=10mA VF IF=100mA VF IF=500mA VF IF=1.0A CJ VR=4.0V, f=1.0MHz MIN TYP 80 150 220 275 MAX 150 250 400 450 1.1 0.9 300 UNITS mV mV mV mV V V 15 MHz pF TYP MAX 10 20 50 0.29 0.36 0.45 0.55 40 50 UNITS A A A V V V V V pF TLM832D CASE - MECHANICAL OUTLINE SUGGESTED MOUNTING PADS For Maximum Power Dissipation (Dimensions in mm) For standard mounting refer to TLM832D Package Details LEAD CODE: 1) Base Q1 2) Emitter Q1 3) Anode D1 4) Anode D1 5) 6) 7) 8) Cathode D1 Cathode D1 Collector Q1 Collector Q1 MARKING CODE: CFD * Note: - Exposed pad P1 common to pins 7 and 8 - Exposed pad P2 common to pins 5 and 6 R2 (19-February 2010) w w w. c e n t r a l s e m i . c o m |
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